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I-DDR4 UDIMM Memory Module Dispaifies

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Uhlobo lokukhokha:

L/C,T/T,D/A

Incoterm:

FOB,CIF,EXW

Min. I-oda:

1 Piece/Pieces

Ukuthutha:

Ocean,Land,Air,Express

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I-Model No.: NS08GU4E8

Amandla Wokunikezela Nemininingwane Eyen...

Ukuthutha: Ocean,Land,Air,Express

Uhlobo lokukhokha: L/C,T/T,D/A

Incoterm: FOB,CIF,EXW

Ukupakisha nokulethwa

Ukuthengisa Amayunithi:: Piece/Pieces

I-8GB 2666MHZ 288-PIN DDR4 UDIMM

Umlando wokubukeza

Revision No.	History	Draft Date	Remark
1.0	Initial Release	Apr. 2022

Uku-oda ithebula lolwazi

Model	Density	Speed	Organization	Component Composition
NS08GU4E8	8GB	2666MHz	1Gx64bit	DDR4 1Gx8 *8

Ukufanisa
I-Hengstar Enfewuffed DdR4 SDRAM DRMMS (isilinganiso sedatha ephindwe kabili esilinganiselwe evumelanayo yememori yememori engaphansi) amamojula aphansi, amamojula wememori yesikhathi esiphakeme esisebenzisa ama-DDR4 SDRAM. I-NS08GU4E8 iyi-1G x 64-bit eyodwa isikhundla esisodwa 8GB DDR4-2666 CL19 PR19 1.2v SDRAM ISIQINISEKISO SOKUGCINWA KWAMAHHALA, KUSUKELA KWE-FOST 1G X-Bit FBGA I-SPD ihlelwe kuJedec Standard Latency DDR4-2666 Isikhathi sika-19-19-19 ku-1.2v. Ngamunye 288-PIN DIMM usebenzisa iminwe yokuxhumana yegolide. I-SDRAM effeffered dimm yenzelwe ukusetshenziswa njengememori eyinhloko lapho ifakiwe ezinhlelweni ezinjengama-PC kanye nama-Workstations.

Izici
Ukuhlinzekwa okuhlinzekwayo: VDD = 1.2V (1.14V ku-1.26V)
vDDQ = 1.2V (1.14V ku-1.26V)
vpp - 2.5v (2.375v kuya ku-2.75v)
vDSDSD = 2.25V ku-3.6V
Ukuqedwa kokupheliswa kwe-nominal futhi kunamandla ekufezeni (ODT) ngedatha, i-Strobe, kanye namasiginali wemaski
Wow-Power Auto Felling Rehorve (LPASR)
I-Data Bus Inxversion (DBI) ngebhasi ledatha
On-die vrefdq Generation and calibration
On-board I2C I-serial Presentence-Detact (SPD) EEPROM
16 amabhange angaphakathi; Amaqembu ama-4 amabhange amane ngalinye
Fixed Burst Chop (BC) ka-4 kanye nobude be-burst (BL) ka-8 nge-Mode Rejista Set (MRS)
Cemectable BC4 noma i-BL8 ku-The-Fly (OTF)
Databus Bhala isheke le-cyclic redundancy (CRC)
Temperature elawulwa ukuvuselela (TCC)
Command / Ikheli (CA) PAR
Ukuphendula kwe-Dram per kuyasekelwa
8 bit ngaphambi kokulanda
cly-nge topology
Command / Ikheli Latency (Cal)
Umyalo wokulawula we-Terteated kanye nebhasi lekheli
PCB: Ukuphakama 1.23 "(31.25mm)
Oxhumana nabo onqenqemeni
rohs ethobela futhi i-halogen-free

Amapharamitha asemqoka

MT/s	tCK (ns)	CAS Latency (tCK)	tRCD (ns)	tRP (ns)	tRAS (ns)	tRC (ns)	CL-tRCD-tRP
DDR4-2666	0.75	19	14.25	14.25	32	46.25	19-19-19

Ithebula Lekheli

Configuration	Number of bank groups	Bank Group Address	Bank Address	Row Address	Column Address	Page size
8GB(1Rx8)	4	BG0-BG1	BA0-BA1	A0-A15	A0-A9	1 KB

Umdwebo weBlock Block

I-8GB, i-1GX64 module (1Rank of x8)

Qaphela:

I-OneWuness Enyewwize Emize, Amanani Aphikisayo angu-15ω ± 5%.

I-2.ZQ Resistrors ingama-24ω ± 1% .Ngawo wonke amanye amanani athile wokuphikiswa abhekisela kumdwebo ofanele we-wiring.

3.event_n inentambo kulo mklamo. I-spd ye-Standalone ingahle isetshenziswe futhi. Azikho izinguquko ezilukhuni ezidingekayo.

Izilinganiso eziphezulu ngokuphelele

Izilinganiso eziphezulu ze-DC eziphezulu

Symbol	Parameter	Rating	Units	NOTE
VDD	Voltage on VDD pin relative to VSS	-0.3 ~ 1.5	V	1,3
VDDQ	Voltage on VDDQ pin relative to VSS	-0.3 ~ 1.5	V	1,3
VPP	Voltage on VPP pin relative to VSS	-0.3 ~ 3.0	V	4
VIN, VOUT	Voltage on any pin except VREFCA relative to VSS	-0.3 ~ 1.5	V	1,3,5
TSTG	Storage Temperature	-55 to +100	°C	1,2

Qaphela:

I-1.SSTRSTES enkulu kunaleyo efakwe kuhlu ngaphansi kwe- "Aplothel Appely Raticings" ingadala ukulimala okungapheli kudivayisi.

Lesi yisilinganiso sokuxineka kuphela kanye nokusebenza okusebenzayo kwensiza ngalezi noma ezinye izimo ngenhla kwalezo ezikhonjisiwe ezigabeni zokusebenza kwalokhu okucacisiwe akubonakali. Ukuvezwa kwezimo eziphakeme kakhulu zokulinganisa kwezikhathi ezeluliwe kungathinta ukuthembeka.

I-2.Storage lokushisa yicala lokushisa elingaphezulu komhlaba enkabeni / ohlangothini oluphezulu lwe-DRAM. Ngemibandela yokulinganisa, sicela ubheke ku-Jesd51-2 ejwayelekile.

I-3.VDD ne-VDDQ kumele ibe ngaphakathi kwama-300mv yomunye nomunye ngaso sonke isikhathi; futhi i-vrefca akumele ibe nkulu kune-0.6 x vddq, lapho i-VDD ne-VDDQ ingaphansi kwama-500MV; I-Vrefca ingalingana noma ngaphansi kwama-300MV.

I-4.VPP kumele ilingane noma ibe nkulu kune-VDD / VDDD ngaso sonke isikhathi.

I-Estrosershoot Area ngenhla kwe-1.5V ichaziwe ekusebenzeni kwedivaysi ye-DDR4 .

I-Dram Contencent Ukusebenza Kwezinga lokushisa

Symbol	Parameter	Rating	Units	Notes
TOPER	Normal Operating Temperature Range	0 to 85	°C	1,2
TOPER	Extended Temperature Range	85 to 95	°C	1,3

Amanothi:

I-Tober yokushisa eyi-1.Oupting Literate iyisinyathelo sokushisa esingaphezulu esiphakathi nendawo / phezulu kwe-DRAM. Okwezimo zokulinganisa, sicela ubheke ku-Jedec Dwew Jedest51-2.

2.Ikushisa okujwayelekile lokushisa licacisa amazinga okushisa lapho yonke imininingwane ye-DRAM izosekelwa. Ngesikhathi sokusebenza, izinga lokushisa le-DRAM kumele ligcinwe phakathi kuka-0 - 85 ° C ngaphansi kwazo zonke izimo zokusebenza.

Izicelo ezi-3.Some zidinga ukusebenza kwe-DRAM ebangeni lokushisa elinwetshiwe phakathi kwamazinga angama-85 ° C no-95 ° C Ukucaciswa okugcwele kuqinisekisiwe kuleli banga, kepha izimo ezilandelayo ezilandelayo ziyasebenza:

a). Imiyalo yokuqabuleka kumele iphindwe kabili kumvamisa, ngakho-ke yenza ukunciphisa isikhawu sokuvuselela i-Trefi ku-3.9 μs. Kungenzeka futhi ukucacisa ingxenye nge-1X ukuvuselelwa (TreFI kuya ku-7.8μs) kububanzi bokushisa obunwetshiwe. Sicela ubheke kwi-SPM SPD yokutholakala kokukhethwa kukho.

b). Uma ukusebenza kokuzivuselela kuyadingeka ebangeni lokushisa elinwetshiwe, bese kuba namandla okusebenzisa imodi yokuvuselela amandla nge-Extended Ukushisa Ububanzi Bokulinganisa (i-MR2 A6 = 0B ne-MR2 A7 = 1B) noma inika amandla ukuvuselela okuzenzakalelayo okuzenzakalelayo Imodi (MR2 A6 = 1B ne-MR2 A7 = 0B).

Izimo zokusebenza ze-AC & DC

Kunconywe izimo ze-DC ezisebenzayo

Symbol	Parameter	Rating			Unit	NOTE
Symbol	Parameter	Min.	Typ.	Max.	Unit	NOTE
VDD	Supply Voltage	1.14	1.2	1.26	V	1,2,3
VDDQ	Supply Voltage for Output	1.14	1.2	1.26	V	1,2,3
VPP	Supply Voltage for DRAM Activating	2.375	2.5	2.75	V	3