Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

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86-755-89992216

Shenzhen Hengstar Technology Co., Ltd.
HomeImikhiqizoIzesekeli zeModule ye-Industrial SmartI-DDR3 UDIMM Memory Module Discuse

I-DDR3 UDIMM Memory Module Discuse

Uhlobo lokukhokha:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. I-oda:
1 Piece/Pieces
Ukuthutha:
Ocean,Air,Express,Land
  • Incazelo yomkhiqizo
Overview
Izimfanelo Zomkhiqizo

I-Model No.NSO4GU3AB

Amandla Wokunikezela Nemininingwane Eyen...

UkuthuthaOcean,Air,Express,Land

Uhlobo lokukhokhaL/C,T/T,D/A

IncotermFOB,EXW,CIF

Ukupakisha nokulethwa
Ukuthengisa Amayunithi:
Piece/Pieces

I-4GB 1600mhz 240-PIN DDR3 UDIMM


Umlando wokubukeza

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Uku-oda ithebula lolwazi

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Ukufanisa
I-HEngstar Enforfed Ibiffered DdR3 SDRAM DRMMS (isilinganiso sedatha ephindwe kabili esilinganiselwe esivumelanisiwe sememori yememori engaphakathi) amamojula aphansi, amamojula wememori ye-high-speed operation esebenzisa amadivaysi e-DDR3 SDRAM. I-NS04GU3AB i-512m x 64-bit ezimbili isikhundla se-4GB DDR3-1600 CL11 1.5v SDRAM FUMUFFUFED DIMM DIMM, kususelwa kwizingxenye eziyishumi nesithupha ezingama-256m x 8-Bit FBGA. I-SPD yahlelwa kuJedec Standard Latency DDR3-1600 isikhathi se-11-11-11 ku-1.5v. Ngamunye we-240-pin dimm usebenzisa iminwe yokuxhumana yegolide. I-SDRAM effeffered dimm yenzelwe ukusetshenziswa njengememori eyinhloko lapho ifakiwe ezinhlelweni ezinjengama-PC kanye nama-Workstations.


Izici
Ukuhlinzekwa okuhlinzekwayo: VDD = 1.5v (1.425V ku-1.575v)
vDDQ = 1.5v (1.425v kuya ku-1.575v)
800mhz FCK for 1600MB / Sec / Pin
8 ibhange elizimele elizimele
I-Cas Latency: 11, 10, 9, 8, 7, 6
I-Latency Engezwayo Esengeziwe: 0, CL - 2, noma CL - 1 Clock
8-bit pre-ukulanda
Ubude be-burst: 8 (Ukuhlangana ngaphandle komkhawulo, ngokulandelana kwekheli elithi "
bi-ukuqondisa ukuqondiswa kwedatha yedatha
Ukulinganisa (self); Ukulinganisa kwangaphakathi nge-PIN ye-ZQ (RZQ: 240 OHM ± 1%)
on Ukufa kuqediwe usebenzisa i-Odt Pin
average isikhathi sokuvuselela 7.8US at ephansi kunesikwele 85 ° C, 3.9Us ngo-85 ° C <TSELES <95 ° C
Asynchronous reset
Amandla wedatha ephumayo
cly-nge topology
PCB: Ukuphakama 1.18 "(30mm)
rohs ethobela futhi i-halogen-free


Amapharamitha asemqoka

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Ithebula Lekheli

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Izincazelo ze-PIN

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Amanothi : Ithebula lokuchaza iPIN ngezansi luhlu oluphelele lwazo zonke izikhonkwane ezingenzeka kuwo wonke amamojula we-DDR3. Zonke izikhonkwane ezibalwe ngohlu ungasekelwa kule module. Bheka izabelo ze-PIN ngolwazi oluqondile kule module.


Umdwebo weBlock Block

I-4GB, i-512MX64 Module (2Rank of x8)

1


2


Qaphela:
I-1.The ibhola le-zq kwingxenye ngayinye ye-DDR3 ixhumeke kwi-240 ω ± 1% 1% eboshwe phansi. Isetshenziselwa ukulinganisa kokuqedwa kokufa okuku-die kanye nomshayeli wokukhipha.



Ubukhulu bemodyuli


Ukubuka kwangaphambili

3

Ukubuka kwangaphambili

4

Amanothi:
1. BALL ubukhulu bakumamilimitha (amayintshi); Max / min noma ejwayelekile (yp) lapho kuphawulwe khona.
I-2.Poleraralaralaralal kuwo wonke ubukhulu ± 0,15mm ngaphandle kokuthi kuchaziwe ngenye indlela.
3.Umdwebo wobukhulu bokubhekelwa kuphela.

Izigaba zomkhiqizo : Izesekeli zeModule ye-Industrial Smart

Imeyili kulo mthengisi
  • *Isihloko:
  • *Kuya:
    Mr. Jummary
  • *I-imeyili:
  • *Umlayezo:
    Umlayezo wakho kufanele ube phakathi kwezinhlamvu ezingu-20-8000
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